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DP8464B Datasheet(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DP8464B
Description  Disk Pulse Detector
PDF  26 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8464B Datasheet(HTML) 12 Page - National Semiconductor (TI)

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Application Information (Continued)
This time can be decreased by placing an external resistor
across the CAGC For instance if a 100k resistor is placed in
parallel with CAGC then the discharge current is 40 mA The
time required to increase the amplifier gain is now 40 times
faster or 275 ms If this external resistor is made even small-
er say 10k then the discharge time will go to 275 ms Now
however there is another problem introduced The re-
sponse time of the AGC is so fast that it distorts the signal
at the output of the Gain Controlled Amplifier Distortion of
the signal at the Amplifier Output can affect the time posi-
tion of the peaks of this signal Be sure to check this distor-
tion over the range of input levels you expect to encounter
when choosing the external R and C values for the AGC
If the value of the bleed resistor across the CAGC is de-
creased (in order to equalize the AGC attack and decay
times) the value of CAGC must be increased in order to
maintain an AGC response that does not distort the signal
There is a second order effect on the amplitude that results
from this attack and decay time equalization Referring to
Figure 2 notice that the AGC is driven from a full wave
rectified version of the Gate Channel Input signal When the
AGC is operated normally (ie fast attack and slow decay)
the voltage that appears across CAGC is the peak detected
value of this full wave rectified waveform However if you
equalize the AGC attack and decay times the voltage
across CAGC is the RMS voltage (0707 times the peak) of
the full wave rectified waveform Thus the voltage across
CAGC is less and the amplitude out of the Gain Controlled
Amplifier will consequently be 14 times larger
It is possible to externally drive the CAGC pin to control the
gain of the amplifier It must be noted that the gain of the
amplifier is not always exactly 200 when the voltage on
CAGC is 34V The transfer curve between the gain of the
amplifier and the voltage on CAGC is only approximate This
transfer curve will vary between parts and with temperature
Care should be taken to prevent the voltage on the CAGC
pin from going below ground or above 55V
Figure 7 shows
a typical curve of the Gain Controlled Amplifier Gain vs the
voltage across CAGC (Vpin 16)
TLF5283 – 12
FIGURE 7 Gain Controlled Amplifier Gain vs Vpin 16
It is possible to change the time constant of the AGC circuit
by switching in different external components at the desired
times For instance as shown in
Figure 8 an external open
collector TTL gate and resistor can be added in parallel with
CAGC to decrease the AGC response time Similarly an ex-
ternal capacitor could be switched in to increase the re-
sponse time Since in the absence of an external resistor
the discharge time of CAGC is much longer than the attack
time there may be some applications where it is desirable to
switch in a parallel resistor to quickly discharge CAGC then
switch it out to force a quick attack Because of the quick
attack time the AGC obtains the proper level quicker than it
would had CAGC simply been allowed to discharge to the
new level
There are some applications where it is desirable to hold the
AGC level for a period of time This can be done by raising
the READ WRITE pin This will shut off the input circuitry
and it will take time (about 25 ms) for the circuit to recover
when going back into the read mode
Figure 9 shows a
method to hold the AGC level while remaining in the read
mode (which could be used in embedded servo applica-
tions) If the voltage on VREF is raised to 3V then the ampli-
fier output voltage cannot get large enough to turn on the
circuitry to charge up CAGC For this to work properly there
can not be a large discharge current path (resistor in parallel
with CAGC) across CAGC The AGC block can be bypassed
altogether by connecting VREF to 3V In this way the user
can use his own AGC circuit to drive the CAGC pin directly
TLF5283 – 13
FIGURE 8 Circuit to Decrease AGC Response Time
TLF5283 – 14
FIGURE 9 Circuit for AGC Hold
READ WRITE
In the normal read mode the signal from the readwrite
head amplifier is in the range of 20 mVpp to 660 mVpp
However when data is being written to the disk the signal
coming into the analog input of the pulse detector will be on
the order of 600 mV Such a large signal will disturb the
AGC level and would probably saturate the amplifier In ad-
dition if a different readwrite amplifier is selected there will
be a transient introduced because the offset of the pream-
plifiers are not matched A READ WRITE input pin has
been provided to minimize these effects to the pulse detec-
tor This is a standard TTL input
When the READ WRITE pin is low the pulse detector is in
the read mode When the READ WRITE pin is taken high
three things happen First the 1k resistors across the AMP
IN pins are shunted by 300X resistors as described previ-
ously in the Gain Controlled Amplifier section Next the am-
plifier is squelched so there is no signal on the Amp Output
12



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