TMP007 datasheet(5/55 Pages) TI1

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TMP007

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SBOS685C – APRIL 2014 – REVISED JULY 2015

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input voltage rating applies to all TMP007 input voltages.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Voltage

Supply voltage, VS

Input voltage

ADR1

VS + 0.5

All other pins

–0.5

Current

Input current, any pin

Temperature

Operating range

–40

+125

°C

Junction, TJ

125

°C

Storage, Tstg

–65

+125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

Machine model

±200

(1)

Object temperature is application dependent.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage, VS

2.5

3.3

5.5

Operating temperature range

–40

+125

°C

Die temperature, TDIE

125

°C

Object temperature, TOBJ

See note (1)

°C

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

TMP007

UNIT

YZF (DSBGA)

8 PINS

RθJA

Junction-to-ambient thermal resistance

115.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

0.4

°C/W

RθJB

Junction-to-board thermal resistance

14.3

°C/W

ψJT

Junction-to-top characterization parameter

3.8

°C/W

ψJB

Junction-to-board characterization parameter

14.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

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