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OPA643 Datasheet(PDF) 9 Page - Texas Instruments |
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OPA643 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 16 page ![]() 9 ® OPA686 transimpedance amplifier. One transimpedance design ex- ample is shown on the front page of the data sheet. Designs that require high bandwidth from a large area (high capaci- tance) detector with relatively low transimpedance gain will benefit from the low input voltage noise offered by the OPA686. This input voltage noise will be peaked up over frequency at the output by the diode source capacitance, and can, in many cases, become the limiting factor to input sensitivity. The key elements of the design are the expected diode capacitance (CD) with the reverse bias voltage (–VB) applied, the desired transimpedance gain, RF, and the GBP of the OPA686 (1600MHz). Figure 3 shows a design using a 50pF source capacitance diode and a 10k Ω transimpedance gain. With these three variables set (and including the parasitic input capacitance for the OPA686 added to CD), the feedback capacitor value (CF) may be set to control the frequency response. Where: IEQ = Equivalent input noise current if the output noise is bandlimited to F < 1/(2 πR FCD) IN = Input current noise for the op amp inverting input EN = Input voltage noise for the op amp CD = Diode capacitance F = Bandlimiting frequency in Hz (usually a post filter prior to further signal processing) Evaluating this expression up to the feedback pole frequency at 15.5MHz for the circuit of Figure 3, gives an equivalent input noise current of 6.4pA/ √Hz. This is much higher than the 1.8pA/ √Hz for just the op amp itself. This result is being dominated by the last term in the equivalent input noise expression. It is essential in this case to use a low voltage noise op amp. For example, if a slightly higher input noise voltage, but otherwise identical op amp were used instead of the OPA686 in this application (say 2.0nV/ √Hz ), the total input-referred current noise would increase to 9.5pA/ √Hz. LOW GAIN COMPENSATION FOR IMPROVED SFDR Where a low gain is desired, and inverting operation is acceptable, a new external compensation technique may be used to retain the full slew rate and noise benefits of the OPA686 while giving increased loop gain and the associ- ated improvement in distortion offered by the decompen- sated architecture. This technique shapes the loop gain for good stability while giving an easily controlled second- order low pass frequency response. Considering only the noise gain (non-inverting signal gain) for the circuit of Figure 4, the low frequency noise gain, (NG1) will be set by the resistor ratios while the high frequency noise gain (NG2) will be set by the capacitor ratios. The capacitor values set both the transition frequencies and the high frequency noise gain. If this noise gain, determined by NG2 = 1+CS/CF, is set to a value greater than the recommended minimum stable gain for the op amp and the noise gain pole, set by 1/RFCF, is placed correctly, a very well controlled, 2nd-order low pass frequency response will result. FIGURE 3. Wideband, Low Noise, Transimpendance Amplifier. To achieve a maximally flat 2nd-order Butterworth fre- quency response, the feedback pole should be set to: 1/(2 πR FCF) = √(GBP/(4πRFCD)) Adding the common-mode and differential mode input ca- pacitance (1.0 + 2.0)pF to the 50pF diode source capacitance of Figure 3, and targeting a 10k Ω transimpedance gain using the 1600MHz GBP for the OPA686, will require a feedback pole set to 15.5MHz. This will require a total feedback capacitance of 1.0pF. Typical surface-mount resistors have a parasitic capacitance of 0.2pF, leaving the required 0.8pF value shown in Figure 3 to get the required feedback pole. This will give an approximate –3dB bandwidth equal to: f–3dB = √(GBP/2πRFCD)Hz The example of Figure 3 will give approximately 23MHz flat bandwidth using the 0.8pF feedback compensation. If the total output noise is bandlimited to a frequency less than the feedback pole frequency, a very simple expression for the equivalent input noise current can be derived as: FIGURE 4. Broadband Low Gain Inverting External Com- pensation. R F 500 Ω C S 27pF OPA686 +5V –5V V O V I C F 2.9pF R G 250 Ω I EQ = I N 2 + 4kT R F + E N R F 2 + E N 2πCD F ()2 3 R F 10k Ω Supply Decoupling Not Shown C D 50pF λ OPA686 +5V –5V –V B I D V O = ID RF C F 0.8pF |
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