ESD7241 datasheet(2/6 Pages) ONSEMI

2 / 6 page

ESD7241, SZESD7241

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Bi−Directional TVS

IPP

VRWM

VC VBR

VRWM

VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

Breakdown Voltage

VBR

IT = 1 mA (Note 3)

24.3

Reverse Leakage Current

VRWM = 24 V

0.5

Clamping Voltage TLP

IPP = 8 A (Note 4)

Clamping Voltage TLP

IPP = 16 A (Note 4)

Junction Capacitance

VR = 0 V, f = 1 MHz

VR = 0 V, f = 1 GHz

1.0

0.7

Dynamic Resistance

RDYN

TLP Pulse

0.84

Insertion Loss

f = 1 GHz

f = 3 GHz

0.15

0.58

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

TYPICAL CHARACTERISTICS

Figure 1. Typical IEC61000−4−2 + 8 kV Contact

ESD Clamping Voltage

Figure 2. Typical IEC61000−4−2 − 8 kV Contact

ESD Clamping Voltage

TIME (ns)

150

125

100

−25

−20

100

140

150

125

100

−25

−120

−100

−80

−60

−20

120

−40

−140

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