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LM358FVT Datasheet(PDF) 30 Page - Rohm |
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LM358FVT Datasheet(HTML) 30 Page - Rohm |
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30 / 48 page  Datasheet www.rohm.com TSZ02201-0GMG0G200190-1-2 ©2015 ROHM Co., Ltd. All rights reserved. 30/44 01.Aug.2016 Rev.005 TSZ22111･15･001 LM358xxx LM324xxx LM2904xxx LM2902xxx Operational Notes – continued 11. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 68. Example of monolithic IC structure |
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