NE021 datasheet(1/12 Pages) ETC

Part #	NE021

Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

nonpromotive:

NE02100

NE02133

NE02139

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

from

this

datasheet

are

discontinued:

NE02107

NE02135

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NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE021

SERIES

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,

2 GHz Gain Compression

DESCRIPTION

NEC's NE021 series of NPN silicon transistors provides eco-

nomical solutions to wide ranges of amplifier and oscillator

problems. Low noise and high current capability provide low

intermodulation distortion. The NE021 series is available as a

chip or in several package styles. The series uses the NEC

gold, platinum, titanium, and platinum-silicide metallization

system to provide the utmost in reliability. NE02107 is avail-

able in both common-base and common-emitter configura-

tions and has been qualified for high-reliability space applica-

tions.

00 (CHIP)

07/07B

35 (MICRO-X)

33 (SOT 23 STYLE)

39 (SOT 143 STYLE)

FREQ.

NFOPT

GA

Γ

ΓOPT

(MHz)

(dB)

MAG

ANG

Rn/50

VCE = 10 V, IC = 20 mA

500

1.8

17.5

0.11

156

.20

1000

2.1

12.5

0.27

168

.16

1500

2.3

9.5

0.36

-156

.18

2000

2.6

7.5

0.43

-147

.21

NE02139

TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ.

NFOPT

GA

Γ

ΓOPT

(MHz)

(dB)

MAG

ANG

Rn/50

VCE = 10 V, IC = 5 mA

500

1.2

18.60

.36

69

.14

1000

1.5

13.82

.31

124

.12

1500

2.0

11.83

.50

165

.05

2000

2.4

9.36

.44

-175

.06

2500

2.6

7.82

.52

-161

.10

3000

3.6

7.51

.68

-141

.14

3500

3.7

6.31

.71

-139

.21

VCE = 10 V, IC = 20 mA

500

1.8

21.32

.16

149

.15

1000

1.9

16.15

.33

169

.13

1500

2.4

13.50

.46

-179

.09

2000

2.9

11.02

.53

-167

.08

2500

3.2

9.12

.57

-154

.14

3000

3.9

8.10

.62

-139

.27

3500

4.3

6.48

.67

-134

.42

NE02135

TYPICAL NOISE PARAMETERS (TA = 25°C)

California Eastern Laboratories

Similar Part No. - NE021

Manufacturer	Part #	Datasheet	Description
NEC	NE021	635Kb / 14P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE021	184Kb / 12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
California Eastern Labs	NE02100	184Kb / 12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
Advanced Semiconductor	NE02103	38Kb / 1P	NPN SILICON RF TRANSISTOR
California Eastern Labs	NE02107	184Kb / 12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz

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NE021 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

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