NE894M13 datasheet(2/8 Pages) NEC

2 / 8 page

Notes:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

3.0

VEBO

Emitter to Base Voltage

1.5

Collector Current

PT2

Total Power Dissipation

105

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

Ambient Temperature, TA (°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Collector to Base Voltage, VCB (V)

REVERSE TRANSFR CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

150

125

100

105

Mounted on Glass epoxy PCB

(1.08 cm

2 x 1.0 mm (t) )

025

100

125

150

0.5

0.4

0.3

0.2

0.1

0246810

f = 1 MHz

NE894M13

VCE = 1 V

100

0.1

0.001

0.0001

0.01

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base to Emitter Voltage, VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

012345

500 µA

150 µA

200 µA

250 µA

300 µA

350 µA

400 µA

450 µA

100 µA

IB = 500 µA

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Collector to Emitter Voltage, VCE (V)

NE894M13 Datasheet(PDF) 2 Page - NEC

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