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MIC5012 Datasheet(PDF) 6 Page - Micrel Semiconductor |
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MIC5012 Datasheet(HTML) 6 Page - Micrel Semiconductor |
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6 / 9 page ![]() April 1998 5-119 MIC5012 Micrel 5 Input Source Gate 1/2 MIC5012 V+ Gnd IRF540 10µF Figure 3. Bootstrapped High-Side Driver Control Input + LOAD 100nF 1N4001 (2) 1N5817 7 to 15V Applications Information (Continued) Input Source Gate 1/2 MIC5012 V+ Gnd IRFP044 (2) 10µF Figure 5. 50-Ampere Industrial Switch + LOAD 24V 330k Ω 100k Ω OFF ON CR2943-NA102A (GE) pitfalls most often encountered during prototyping: Sup- plies: many bench power supplies have poor transient response. Circuits that are being pulse tested, or those that operate by pulse-width modulation will produce strange results when used with a supply that has poor ripple rejection, or a peaked transient response. Always monitor the power supply voltage that appears at the drain of a high- side driver (or the supply side of the load in a low-side driver) with an oscilloscope. It is not uncommon to find bench power supplies in the 1kW class that overshoot or under- shoot by as much as 50% when pulse loaded. Not only will the load current and voltage measurements be affected, but it is possible to over-stress various components—espe- cially electrolytic capacitors—with possibly catastrophic results. A 10 µF supply bypass capacitor at the chip is recommended. Residual Resistances: Resistances in circuit connections may also cause confusing results. For example, a circuit may employ a 50m Ω power MOSFET for low drop, but careless construction techniques could easily add 50 to 100m Ω resistance. Do not use a socket for the MOSFET. If the MOSFET is a TO-220 type package, make high-current drain connections to the tab. Wiring losses have a profound effect on high-current circuits. A floating millivoltmeter can identify connections that are contributing excess drop un- der load. Circuit Topologies The MIC5012 is suited for use with standard MOSFETs in high- or low-side driver applications. In addition, the MIC5012 works well in applications where, for faster switching times, the supply is bootstrapped from the MOSFET source out- put. Low voltage, high-side drivers (such as shown in Figure 1) are the slowest; their speed is reflected in the gate turn- on time specifications. The fastest drivers are the low-side and bootstrapped high-side types (Figures 2 and 4). Load current switching times are often much faster than the time to full gate enhancement, depending on the circuit type, the MOSFET, and the load. Turn-off times are essentially the same for all circuits (less than 10 µs to V GS = 1V). The choice of one topology over another is based on a combination of considerations including speed, voltage, and desired sys- tem characteristics. High-Side Driver (Figure 1). The high-side topology works well down to V+ = 7V with standard MOSFETs. From 4.75 to 7V supply, a logic-level MOSFET can be substituted since the MIC5012 will not reach 10V gate enhancement (10V is the maximum rating for logic-compatible MOSFETs). 100k Ω Figure 4. Improved Opto-Isolator Performance 1k Ω To MIC5012 Input 100k Ω 4N35 33k Ω 33pF MPSA05 15V 10mA Control Input |
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