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MIC5012 Datasheet(PDF) 7 Page - Micrel Semiconductor |
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MIC5012 Datasheet(HTML) 7 Page - Micrel Semiconductor |
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7 / 9 page ![]() MIC5012 Micrel 5-120 April 1998 Applications Information (Continued) Input Source Gate 1/2 MIC5012 V+ IRF541 1µF Figure 6. Half-Bridge Motor Driver + 100nF 1N4001 (2) 1N5817 15V 220pF 1N4148 22k Ω M 12V, 10A Stalled Input Source Gate 1/2 MIC5012 V+ Gnd IRF541 10µF + 1nF 10k Ω 2N3904 22k Ω 15V PWM INPUT High-side drivers implemented with MIC501X drivers are self-protected against inductive switching transients. Dur- ing turn-off an inductive load will force the MOSFET source 5V or more below ground, while the MIC5012 holds the gate at ground potential. The MOSFET is forced into conduction, and it dissipates the energy stored in the load inductance. The MIC5012 source pin is designed to withstand this negative excursion without damage. External clamp diodes are unnecessary. Low-Side Driver (Figure 2). A key advantage of the low- side topology is that the load supply is limited only by the MOSFET BV DSS rating. Clamping may be required to protect the MOSFET drain terminal from inductive switch- ing transients. The MIC5012 supply should be limited to 15V in low-side topologies; otherwise, a large current will be forced through the gate clamp zener. The switching speed to 10V enhancement is 300 µs driving 1nF on a 5V supply. On a 15V supply the turn-on time is less than 2 µs to 10V Low-side drivers constructed with the MIC501X family are also fast; the MOSFET gate is driven to near supply immediately when commanded ON. Typical circuits achieve 10V enhancement in 10 µs or less on a 12 to 15V supply. Modifying Switching Times. Do not add external capacitors to the MOSFET gate. Add a resistor (1k Ω to 51kΩ) in series with the gate to slow down the switching time. Bootstrapped High-Side Driver (Figure 3). The speed of a high-side driver can be increased to better than 10 µs by bootstrapping the supply off of the MOSFET source. This topology can be used where the load is pulse-width modu- lated (100Hz to 20kHz), or where it is energized continu- ously. The Schottky barrier diode prevents the MIC5012 supply pin from dropping more than 200mV below the drain supply, and it also improves turn-on time on supplies of less than 10V. Since the supply current in the “off” state is only a small leakage, the 100nF bypass capacitor tends to remain charged for several seconds after the MIC5012 is turned off. In a PWM application the chip supply is sustained at a higher potential than the system supply, which im- proves switching time. Opto-Isolated Interface (Figure 4). Although the MIC5012 has no special input slew rate requirement, the lethargic transitions provided by an opto-isolator may cause oscilla- tions on the rise and fall of the output. The circuit shown accelerates the input transitions from a 4N35 opto-isolator by adding hysteresis. Opto-isolators are used where the control circuitry cannot share a common ground with the MIC5012 and high-current power supply, or where the control circuitry is located remotely. This implementation is intrinsically safe; if the control line is severed the MIC5012 will turn OFF. Industrial Switch (Figure 5). The most common manual control for industrial loads is a push button on/off switch. The “on” button is physically arranged in a recess so that in a panic situation the “off” button, which extends out from the control box, is more easily pressed. This circuit is compat- ible with control boxes such as the CR2943 series (GE). The circuit is configured so that if both switches close simultaneously, the “off” button has precedence. This application also illustrates how two (or more) MOSFETs |
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