 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STM8AL3L8x Datasheet(PDF) 72 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM8AL3L8x Datasheet(HTML) 72 Page - STMicroelectronics |
|
|
72 / 131 page  Electrical parameters STM8AL318x STM8AL3L8x 72/131 DocID027179 Rev 6 Figure 13. Typical IDD(RUN) from RAM vs. VDD (HSI clock source), fCPU =16 MHz(1) 1. Typical current consumption measured with code executed from RAM. 1. CPU executing typical data processing 2. The run from RAM consumption is approximated with the linear formula: IDD(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA 3. Guaranteed by characterization results. 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 32. 5. The run from Flash consumption is approximated with the linear formula: IDD(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA 6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 33 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
