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STM8AL3L8x Datasheet(PDF) 86 Page - STMicroelectronics |
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STM8AL3L8x Datasheet(HTML) 86 Page - STMicroelectronics |
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86 / 131 page  Electrical parameters STM8AL318x STM8AL3L8x 86/131 DocID027179 Rev 6 Figure 22. LSE oscillator circuit diagram Internal clock sources Subject to general operating conditions for VDD, and TA. High speed internal RC oscillator (HSI) In the following table, data are based on characterization results, not tested in production, unless otherwise specified. Table 33. LSE oscillator characteristics Symbol Parameter Conditions Min. Typ. Max. Unit fLSE Low speed external oscillator frequency - - 32.768 - kHz RF Feedback resistor ΔV = 200 mV - 1.2 - M Ω C(1)(2) Recommended load capacitance - - 8 - pF IDD(LSE) LSE oscillator power consumption VDD = 1.8 V - 450 - nA VDD = 3 V - 600 - VDD = 3.6 V - 750 - gm Oscillator transconductance - 3(3) -- µA/V tSU(LSE)(4) Startup time VDD is stabilized - 1 - s 1. C=CL1=CL2 is approximately equivalent to 2 x crystal CLOAD. 2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with a small Rm value. Refer to crystal manufacturer for more details. 3. Guaranteed by design. 4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation. This value is measured for a standard crystal resonator and it varies significantly with the crystal manufacturer. |
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