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HAL115 Datasheet(PDF) 4 Page - Micronas

Part # HAL115
Description  Hall Effect Sensor IC
PDF  9 Pages
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Manufacturer  MICRONAS [Micronas]
Direct Link  http://www.micronas.com
Logo MICRONAS - Micronas

HAL115 Datasheet(HTML) 4 Page - Micronas

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HAL115
MICRONAS INTERMETALL
4
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
VOH
Output Off Voltage
3
–
281)
V
IO
Continuous Output On Current
3
–
20
mA
IO
Peak Output On Current
3
–
2502)
mA
–IDD
Reverse Supply Current
1
251)
mA
Ts
Storage Temperature Range
–65
150
°C
TJ
Junction Temperature Range
–40
150
°C
1) as long as TJmax is not exceeded
2) t<2 ms
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.3
–
24
V
IO
Continuous Output On Current
3
0
–
12.5
mA
RS
Series Resistor
1
–
–
270
Ω
Electrical Characteristics at TJ = –40 °C to +100 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VOL
Output Voltage
3
–
125
250
mV
IO = 12.5 mA, TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
–
125
400
mV
IO = 12.5 mA
IOH
Output Leakage Current
3
–
–
1
µA
B < BOFF, TJ = 25 °C
VDD ≤ 20 V
IOH
Output Leakage Current over
Temperature Range
3
–
–
10
µA
B < BOFF
IDD
Supply Current
1
6.5
8.3
11
mA
TJ = 25 °C, VDD = 12 V
IDD
Supply Current over
Temperature Range
1
5.5
8.3
12
mA



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