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HAL115 Datasheet(PDF) 5 Page - Micronas |
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HAL115 Datasheet(HTML) 5 Page - Micronas |
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5 / 9 page ![]() HAL115 MICRONAS INTERMETALL 5 Electrical Characteristics, continued Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions ten(O) Enable Time of Output after Setting of VDD 3 – 6 50 µs VDD = 12 V tr Output Rise Time 3 – 85 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF tf Output Fall Time 3 – 60 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT-89A Thermal Resistance Junction to Substrate Backside – 150 200 K/W Fiberglass Substrate, 30 mm x 10 mm x 1,5mm pad size see Fig. 6 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point – 150 200 K/W Leads at ambient tempera- ture at a distance of 2 mm from case Magnetic Characteristics at TJ = –40 °C to +100 °C, VDD = 4.3 V to 24 V, Typical Characteristics for TJ = 25 °C and VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter Min. Typ. Max. Unit On point BON –10.7 1.2 12.5 mT Off point BOFF –12.5 –1.2 10.7 mT Hysteresis BHYS 1.8 2.4 7 mT BOFF min BON max BHYS Output Voltage Fig. 5: Definition of magnetic switching points and hysteresis 0 Fig. 6: Recommended pad size SOT-89A Dimensions in mm 5.0 2.0 2.0 1.0 |
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