VN7140ASTR datasheet(10/55 Pages) STMICROELECTRONICS

10 / 55 page

Electrical specification

VN7140AJ, VN7140AS

10/55

DocID027401 Rev 3

Symbol

Parameter

Value

Unit

ISENSE

MultiSense pin DC output current (VGND = VCC and VSENSE < 0 V)

MultiSense pin DC output current in reverse (VCC < 0 V)

-20

EMAX

Maximum switching energy (single pulse) (TDEMAG = 0.4 ms;

Tjstart = 150 °C)

VESD

Electrostatic discharge (JEDEC 22A-114F)



INPUT



MultiSense



SEn, SEL0,1, FaultRST



OUTPUT



VCC

4000

2000

4000

VESD

Charge device model (CDM-AEC-Q100-011)

750

Junction operating temperature

-40 to 150

°C

Tstg

Storage temperature

-55 to 150

2.2

Thermal data

Table 4: Thermal data

Symbol

Parameter

Typ. value

Unit

SO-

PowerSSO-

Rthj-board

Thermal resistance junction-board (JEDEC JESD 51-8)

(1)

7.9

°C/W

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-

2)(2)

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-

2)(1)

48.5

26.5

Notes:

(1)Device mounted on four-layers 2s2p PCB

(2)Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace

2.3

Main electrical characteristics

7 V < VCC < 28 V; -40°C < Tj < 150°C, unless otherwise specified.

All typical values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified.

Table 5: Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC

Operating supply

voltage

VUSD

Undervoltage

shutdown

VUSDReset

Undervoltage

shutdown reset

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