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SST25WF010 Datasheet(PDF) 26 Page - Microchip Technology |
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SST25WF010 Datasheet(HTML) 26 Page - Microchip Technology |
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26 / 36 page ![]() ©2014 Silicon Storage Technology, Inc. DS20005016C 11/14 26 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040 EOL Data Sheet Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V in less than 180 ms). If the VDD ramp rate is slower than 1V/100 µs, a hardware reset is required. The recommended VDD power-up to RESET# high time should be greater than 100 µs to ensure a proper reset. See Table 15 and Figures 24 and 25 for more information. Figure 24:Power-Up Reset Diagram Table 15: Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 100 µs TPU-WRITE1 VDD Min to Write Operation 100 µs T15.0 20005016 1328 F37.1 VDD RESET# CE# TPU-READ VDD min 0V VIH TRECR Note: See Table 2 on page 6 for TRECR parameter. |
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