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SST25WF010 Datasheet(PDF) 28 Page - Microchip Technology

Part # SST25WF010
Description  512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
PDF  36 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25WF010 Datasheet(HTML) 28 Page - Microchip Technology

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©2014 Silicon Storage Technology, Inc.
DS20005016C
11/14
28
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
EOL Data Sheet
DC Characteristics
Table 16: DC Operating Characteristics
Symbol
Parameter
Limits
Test Conditions
Min
Typ1
1. Value characterized, not fully tested in production.
Max
Units
IDDR
Read Current
2
5
mA
CE#=0.1 VDD/0.9 VDD@20 MHz,
SO=open
IDDR2
Read Current
4
10
mA
CE#=0.1 VDD/0.9VDD@40 MHz,
SO=open
IDDW
Program and Erase Current
6
10
mA
CE#=VDD
ISB
Standby Current
2
8
µA
CE#=VDD,VIN=VDD or VSS
ILI
Input Leakage Current
1
µA
VIN=GND to VDD,VDD=VDD Max
ILO
Output Leakage Current
1
µA
VOUT=GND to VDD,VDD=VDD Max
VIL
Input Low Voltage
0.3
V
VDD=VDD Min
VIH
Input High Voltage
0.7 VDD
VVDD=VDD Max
VOL
Output Low Voltage
0.2
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
VDD-0.2
V
IOH=-100 µA, VDD=VDD Min
T16.0 20005016
Table 17: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
COUT1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance
VOUT =0V
12pF
CIN1
Input Capacitance
VIN =0V
6pF
T17.0 20005016
Table 18: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance
100,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T18.0 20005016



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