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SST25WF010 Datasheet(PDF) 28 Page - Microchip Technology |
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SST25WF010 Datasheet(HTML) 28 Page - Microchip Technology |
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28 / 36 page ![]() ©2014 Silicon Storage Technology, Inc. DS20005016C 11/14 28 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040 EOL Data Sheet DC Characteristics Table 16: DC Operating Characteristics Symbol Parameter Limits Test Conditions Min Typ1 1. Value characterized, not fully tested in production. Max Units IDDR Read Current 2 5 mA CE#=0.1 VDD/0.9 VDD@20 MHz, SO=open IDDR2 Read Current 4 10 mA CE#=0.1 VDD/0.9VDD@40 MHz, SO=open IDDW Program and Erase Current 6 10 mA CE#=VDD ISB Standby Current 2 8 µA CE#=VDD,VIN=VDD or VSS ILI Input Leakage Current 1 µA VIN=GND to VDD,VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD,VDD=VDD Max VIL Input Low Voltage 0.3 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VVDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T16.0 20005016 Table 17: Capacitance (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum COUT1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Output Pin Capacitance VOUT =0V 12pF CIN1 Input Capacitance VIN =0V 6pF T17.0 20005016 Table 18: Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 100,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T18.0 20005016 |
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