Handling Procedures

Stresses above these listed maximum ratings may cause

permanent damage to the device. Exposure beyond specified

operating conditions may affect device reliability or cause

malfunction.

sampling at initial device qualification.

2

Absolute Maximum Ratings

Table 1

Parameter

Voltage at V

to V

DD

SS

Min. voltage at RES or RES

Max. voltage at RES or RES

Storage temperature range

V

DD

V

min

V

max

T

STO

-0.3V to+10 V

V

- 0.3 V

SS

-65 to +150

O

V

+ 0.3 V

DD

Symbol

Conditions

This device has built-in protection against high static voltages

or electric fields; however, anti-static precautions must be taken

as for any other CMOS component. Unless otherwise specified,

proper operation can only occur when all terminal voltages are

kept within the supply voltage range.

Operating Conditions

T

A

-40

1

+125

V

8

V

DD

Table 2

Parameter

Symbol Min.

Typ . Max. Units

1)

Operating temperature

Positive supply voltage

Electrical Characteristics

O

T = -40 to +85 C, unless otherwise specified

A

I

DD

V

TH

V

TH

V

HYS

V

OL

V

OL

V

OL

V

OH

V

OH

I

LEAK

V

= 2 V

DD

V

= 5 V, I

= 8 mA

OL

DD

V

= 8 V

DD

1)

Supply current

Threshold voltage

Threshold hysteresis

RES Output Low Level

RES Output High Level

2)

Output leakage current

mA

mA

mA

V

V

V

V

V

V

mV

mV

mV

mV

V

V

mV

mA

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

I

DD

V

= 5 V

DD

V

= 8 V

DD

Version: A,G,M

Version: B,H,N

Version: C,I,O

Version: D,J,P

Version: E,K,Q

Version: F,L,R

I

DD

V

TH

V

TH

Max.

o

at 25 C

Min.

o

at 25 C

V

TH

V

TH

V

OH

V

= 3 V, I

= 4 mA

DD

OL

V

= 1 V, I

= 50

mA

DD

OL

V

= 5 V, I

= -8 mA

DD

OH

V

= 3 V, I

= -4 mA

DD

OH

V

= 1 V, I

= -100

mA

DD

OH

1.77

2.09

2.48

3.11

3.55

4.05

4.3

2.3

850

1.84

2.18

2.59

3.23

3.70

4.22

1.5

3.0

5.2

1.95

2.32

2.73

3.42

3.88

4.42

25

175

140

20

4.5

2.6

950

0.05

2.1

3.9

6.8

2.04

2.41

2.86

3.59

4.08

4.67

3.1

5.7

10.0

2.17

2.55

3.03

3.80

4.32

4.95

400

300

90

1

Table 3

Timing Characteristics

O

V

= 5.0 V, T = -40 to +85 C, unless otherwise specified

DD

A

t

POR

t

SEN

for V

= 5 V to 3 V in 5

ms

DD

140

20

22

Power on reset time

3)

Sensitivity

ms

ms

ms

Table 4

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

3)

Reaction time

t

R

3)

Tested on versions with V higher than 3 V

TH

for V

= 5 V to 3 V in 5

ms

DD

290

0.8 t

R

75

560

150

V6301

R