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3 - 31

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9 Vdc

Gate Bias Voltage (Vgg1)

-2 to 0 Vdc

Gate Bias Voltage (Vgg2)

(Vdd -8) Vdc to Vdd

RF Input Power (RFIN)(Vdd = +8 Vdc)

+16 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 51.5 mW/°C above 85 °C)

4.64 W

Thermal Resistance

(channel to die bottom)

19.4 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (V)

Idd (mA)

+7.5

292

+8.0

290

+8.5

288

Typical Supply Current vs. Vdd

Outline Drawing

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

HMC459

v01.1007

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 18 GHz