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Pad Number

Function

Description

Interface Schematic

1

RFIN

This pad is DC coupled and matched to 50 Ohms.

2Vgg2

Gate Control 2 for amplifier. +3V should be applied to Vgg2

for nominal operation. Vgg2 may be adjusted between 0 to

+5V to temperature compensate gain.

4

RFOUT & Vdd

RF output for amplifier. Connect the DC

bias (Vdd) network to provide drain current (Idd).

See application circuit herein.

5Vgg1

Gate Control 1 for amplifier. Adjust between -2 to 0V

to achieve Idd= 290 mA.

3ACG1

Low frequency termination. Attach bypass capacitor per

application circuit here in.

6ACG2

Low frequency termination. Attach bypass capacitor per

application circuit here in.

Die

Bottom

GND

Die bottom must be connected to RF/DC ground.

Pad Descriptions

HMC459

v01.1007

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 18 GHz