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AH103 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 6 page ![]() Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com November 2003 The Communications Edge TM AH103 High Gain, High Linearity ½ Watt Amplifier Product Information Product Features • 60 – 2700 MHz • +27 dBm P1dB • +46 dBm Output IP3 • 28.5 dB Gain @ 900 MHz • Excellent ACPR • MTTF > 100 Years • SOIC-8 Pkg w/ heat slug Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure Product Description The AH103 is a high gain, high linearity ½-Watt amplifier. This device is comprised of two individual MMIC amplifiers internally and can be used with an external interstage match for any of the mobile infrastructure frequency bands. The dual-stage amplifier achieves up to +46 dBm IP3 performance with 28.5 dB gain. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of a minimum of 100 years at a mounting temperature of 85 °C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high linearity are required. Functional Diagram 1 2 3 4 8 7 6 5 AMP 1 AMP 2 Function Pin No. Amp2 in 1 Amp1 out / Bias 1 2 Ground 3, 5, 8, Backside copper RF in (Amp1 in) 4 RF out (Amp2 out) 6 Bias 2 7 Specifications Parameter Units Min Typ Max Frequency Range (2) MHz 60 800 2700 Gain dB 26.5 28.5 Input Return Loss dB 20 Output Return Loss dB 11 Output P1dB dBm +26 +27 Output IP3 (3) dBm +43 +46 IS-95 Channel Power (4) @ -45 dBc ACPR dBm +21 Noise Figure dB 2.9 Supply Voltage (Amp1) V +4.5 Supply Voltage (Amp2) V +9 Operating Current (Amp1) mA 55 75 100 Operating Current (Amp2) mA 170 200 230 Thermal Resistance (5) °C / W 20.6 Junction Temperature (6) °C 160 Test conditions unless otherwise noted. 1. T = 25ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit. 2. The frequency of operation & bandwidth is determined by the external interstage match. 3. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz. 5. The worst-case junction temperature for a given ground tab temperature can be calculated by multiplying the thermal resistance with the total package power dissipation and adding it to the tab temperature. ie. At 85 °C case temperature for a typical device, the worst-case junction temperature would be = 85 °C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C. 6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Typical Performance Parameter Units Typical Frequency MHz 900 1900 2140 2400 S21 dB 28.5 26 25 24.7 S11 dB -15 -12 -11 -12 S22 dB -11 -11 -14 -17 Output P1dB dBm +27 +26.5 +26.5 +26 Output IP3 dBm +46 +45 +45 +43.3 Channel Power @ -45 dBc ACPR / ACLR dBm +21 +20 +17.2 Noise Figure dB 2.9 3.7 3.5 3.6 Supply Bias 1 +4.5 V @ 75 mA Supply Bias 2 +9 V @ 200 mA 7. Typical parameters reflect performance in an application circuit. 8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz. Absolute Maximum Rating Ordering Information Parameter Rating Part No. Description Operating Case Temperature -40 to +85 °C AH103 High Gain ½ Watt Amplifier Storage Temperature -55 to +125 °C (available in tape and reel) DC Voltage (pin 2) +6 V AH103-PCB900 0.7 – 1.0 GHz Evaluation Circuit DC Voltage (pin 6, 7) +11 V AH103-PCB1750 1.7 – 1.8 GHz Evaluation Circuit RF Input Power (continuous) 4 dB above Input P1dB AH103-PCB1900 1.8 – 2.0 GHz Evaluation Circuit Junction Temperature +220 °C AH103-PCB2140 2.1 – 2.2 GHz Evaluation Circuit Operation of this device above any of these parameters may cause permanent damage. |
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