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MCP632 Datasheet(PDF) 4 Page - Microchip Technology |
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MCP632 Datasheet(HTML) 4 Page - Microchip Technology |
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4 / 60 page ![]() MCP631/2/3/4/5/9 DS20002197C-page 4 2009-2014 Microchip Technology Inc. AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS =GND, VCM =VDD/2, VOUT VDD/2, VL =VDD/2, RL =2 k to VL, CL = 50 pF and CS =VSS (refer to Figure 1-2). Parameters Sym. Min. Typ. Max. Units Conditions AC Response Gain-Bandwidth Product GBWP — 24 — MHz Phase Margin PM — 65 — ° G = +1 Open-Loop Output Impedance ROUT —20 — AC Distortion Total Harmonic Distortion plus Noise THD + N — 0.0015 — % G = +1, VOUT =2VP-P, f = 1 kHz, VDD =5.5V, BW = 80kHz Step Response Rise Time, 10% to 90% tr —20 — ns G = +1, VOUT = 100 mVP-P Slew Rate SR — 10 — V/µs G = +1 Noise Input Noise Voltage Eni —16 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —10 — nV/ Hz f = 1 MHz Input Noise Current Density ini 4— fA/ Hz f = 1 kHz DIGITAL ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM =VDD/2, VOUT VDD/2, VL =VDD/2, RL =2 k to VL, CL = 50 pF and CS =VSS (refer to Figures 1-1 and 1-2). Parameters Sym. Min. Typ. Max. Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2VDD V CS Input Current, Low ICSL —0.1 — nA CS =0V CS High Specifications CS Logic Threshold, High VIH 0.8VDD VDD V CS Input Current, High ICSH —0.7 — µA CS =VDD GND Current ISS -2 -1 —µA CS Internal Pull-Down Resistor RPD —5 — M Amplifier Output Leakage IO(LEAK) —50— nA CS =VDD, TA = +125°C CS Dynamic Specifications CS Input Hysteresis VHYST — 0.25 — V CS High to Amplifier Off Time (output goes High Z) tOFF — 200 — ns G = +1 V/V, VL =VSS, CS =0.8VDD to VOUT =0.1(VDD/2) CS Low to Amplifier On Time tON —2 10 µs G= +1 V/V, VL =VSS, CS =0.2VDD to VOUT =0.9(VDD/2) |
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