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TC215 Datasheet(PDF) 13 Page - Texas Instruments |
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TC215 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 19 page ![]() TC215 1024- × 1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 1989 – REVISED DECEMBER 1991 2-13 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 optical characteristics, TA = 25°C, integration time = 33 ms (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Sensitivity (see Note 9) No IR filter Measured at VU 518 mV/lx Sensitivity (see Note 9) With IR filter U (see Note 10) 64 mV/lx Saturation signal, Vsat (see Note 11) 320 mV Maximum usable signal, Vuse 200 mV Blooming overload ratio (see Note 12) 100 Image-area well capacity 60 x 103 electrons Dark current TA = 21°C 0.027 nA/cm2 Dark signal (see Note 13) TA =40°C TC215-30 5 mV Dark signal (see Note 13) TA = 40°C TC215-40 5 mV Pixel uniformity TC215-30 15 mV Pixel uniformity TC215-40 20 mV Column uniformity TC215-30 1.4 mV Column uniformity TC215-40 1.4 mV Shading VO = 1/2 VU (see Note 10) 15% NOTES: 9. Sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 K. A CM-500 filter is used. Sensitivity is measured at any illumination level that gives an output voltage level less than VU. 10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio is the ratio of blooming exposure to saturation exposure. 13. Dark-signal level is measured from the dark dummy pixels. timing requirements MIN MAX UNIT IAG1, IAG2 200 SRG1, SRG2 10 tr Rise time RST1, RST2 10 ns TRG 200 ABG1, ABG2 100 IAG1, IAG2 200 SRG1, SRG2 10 tf Fall time RST1, RST2 10 ns TRG 200 ABG1, ABG2 100 |
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