TS4100 datasheet(13/24 Pages) SILABS

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Parameter

Symbol

Conditions

Min

Typ

Max

Units

ADDA/B/C, INH Turn-

On Time

tON

VDD = 5.25 V

RL = 5 kΩ, CL = 35 pF

See Figure

2.6 TS4100-TS4102

Address/Enable Turn-

On/Off Time Test Set-

up on page 7

µs

ADDA/B/C, INH Turn-

Off Time

tOFF

0.5

0.8

µs

Break-Before-Make

Delay

tBBM

VNO/C = 5.25 V

RL = 5 kΩ, CL = 35 pF

See Figure

2.7 TS4100-TS4102

Break-Before-Make

Test Setup on page 86

6.5

8.2

µs

Charge-Injection

VNO/C = 5.25 V, CL = 1 nF

See Figure 2.8 TS4100-TS4102 Charge Injec-

tion Test Setup on page 8.

Off-Isolation

VISO

f = 10 kHz, VNO/C = 1 VRMS, RL = 100 kΩ, CL =

50 pF

See Figure 2.9 TS4100-TS4102 Off-Isolation

Test Setup on page 9.

–87

TS4101,TS4102

Crosstalk

VCT

f = 10 kHz, VNO/C = 1 VRMS, RL = 100 kΩ

See Figure 2.11 TS4101 Crosstalk Test Setup

on page 10 and Figure 2.12 TS4102 Crosstalk

Test Setup on page 10.

–77

Total Harmonic Distor-

tion

THD

f = 10 kHz, VNO/C = 400 mVPP (500 mV Offset)

CL = 15 pF, RNO/C = RCOM = 600 Ω

0.16

Power Supply

Supply Current

VDD = 5.25 V

VNO/C = 0 or VDD

TA = 25 ºC

675

765

950

Supply Voltage

VDD

0.8

5.25

Note:

1. VDD = 0.8 V to 5.25 V; INH = GND unless otherwise specified; TA= –40 °C to +85 °C. Typical values are at TA = +25 °C; All

specifications are 100% tested at TA = +85°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device

characterization, not production tested.

2. On-Resistance Flatness is defined by the following equation: (RON0.5V – RON5.25V / RON0.5V) x 100.

3. Tested at VNO/C = 0.5 V and VNO/C = 5.25 V and guaranteed by design from VNO/C = 0 V to VNO/C = 5.25 V.

4. ΔRON=RONMAX−RONMIN

5. Leakage parameters are guaranteed by correlation at TA = 25 ºC and are 100% tested at the maximum rated hot operating tem-

perature.

6. tBBM = tON − tOFF. Not production tested.

TS4100/01/02 Data Sheet

Electrical Characteristics

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