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TS4100 Datasheet(PDF) 14 Page - Silicon Laboratories |
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TS4100 Datasheet(HTML) 14 Page - Silicon Laboratories |
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14 / 24 page ![]() Table 3.2. Absolute Maximum Ratings1 Parameter Symbol Conditions Min Max Units Supply Voltage VDD –0.3 +5.5 V Analog Signal Voltage VNO/C, VCOM –0.3 +5.5 V Digital Signal Voltage VADDA/B/C, VINH –0.3 VDD + 0.3 Analog Peak Current INO/C, ICOM ±15 mA Continuous Power Dissipation PD TA = +70 °C2 1398 mW Operating Temperature –40 +85 °C Storage Temperature –65 +150 °C Lead Temperature (Soldering, 10 s) +300 °C ESD Tolerance Human Body Model 1000 V Machine Model 200 V Note: 1. Electrical and thermal stresses beyond those listed in this table may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sec- tions of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. 2. Derate at 17.5 mW/°C above +70 °C. TS4100/01/02 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 13 |
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