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MJE13007 Datasheet(PDF) 1 Page - ON Semiconductor |
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MJE13007 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 10 page ![]() © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 9 1 Publication Order Number: MJE13007/D MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • SOA and Switching Applications Information • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant* • Complementary to the MJE5850 through MJE5852 Series MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 400 Vdc Collector−Base Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous IC 8.0 Adc Collector Current − Peak (Note 1) ICM 16 Adc Base Current − Continuous IB 4.0 Adc Base Current − Peak (Note 1) IBM 8.0 Adc Emitter Current − Continuous IE 12 Adc Emitter Current − Peak (Note 1) IEM 24 Adc Total Device Dissipation @ TC = 25_C Derate above 25 °C PD 80 0.64 W W/ _C Operating and Storage Temperature TJ, Tstg −65 to 150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 5 Seconds TL 260 _C *Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8lbs. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWER TRANSISTOR 8.0 AMPERES 400 VOLTS − 80 WATTS TO−220AB CASE 221A−09 STYLE 1 1 www.onsemi.com MARKING DIAGRAM 2 3 MJE13007G AY WW A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Device Package Shipping ORDERING INFORMATION MJE13007G TO−220 (Pb−Free) 50 Units / Rail 4 1 BASE 3 EMITTER COLLECTOR 2,4 |
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