MJE13007

www.onsemi.com

4

0.01

0.02

0.05

0.1

0.2

0.5

1

SINGLE PULSE

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

≥ 25°C. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at

the voltages shown on Figure 6 may be found at any case

temperature by using the appropriate curve on Figure 8.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

Use of reverse biased safe operating area data (Figure 7)

is discussed in the applications information section.

1000

10

20 30

70 100

200

50

300

500

Figure 6. Maximum Forward Bias

Safe Operating Area

0

100

200

300

400

500

600

700

800

Figure 7. Maximum Reverse Bias Switching

Safe Operating Area

20

40

60

80

100

120

140

160

Figure 8. Forward Bias Power Derating

2

5

10

20

50

100

200

500

10k

t, TIME (msec)

Figure 9. Typical Thermal Response for MJE13007

20

10

5

1

0.5

0.02

0.05

0.2

0.1

2

100

50

0.01

10

8

6

4

2

0

1

0.8

0.6

0.4

0.2

0

1

0.01

0.02

0.05

0.1

0.2

0.5

0.07

0.7

Extended SOA @ 1

ms, 10 ms

10

ms

1

ms

1 ms

5 ms

DC

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW

GAIN

≥ 4

-5 V

-2 V

0 V

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01