ND2012L/2020L

Siliconix

S-52426—Rev. C, 14-Apr-97

1

N-Channel Depletion-Mode MOSFET Transistors

Product Summary

Part Number

ND2012L

200

12

–1.5 to –4

0.16

ND2020L

200

20

–0.5 to –2.5

0.132

Features

Benefits

Applications

D High Breakdown Voltage: 220 V

D Low Input and Output Leakage

D Low-Power Drive Requirement

D Low Input Capacitance

D Full-Voltage Operation

D Low Offset Voltage

D Low Error Voltage

D Easily Driven Without Buffer

D High-Speed Switching

D Normally “On” Switching Circuits

D Current Sources/Limiters

D Power Supply, Converter Circuits

D Solid-State Relays

D Telecom Switches

1

TO-226AA

(TO-92)

Top View

S

D

G

2

3

_C Unless Otherwise Noted)

Parameter

Symbol

ND2012L

ND2020L

Unit

Drain-Source Voltage

200

200

V

Gate-Source Voltage

"30

"30

V

0.16

0.132

0.1

0.083

A

0.8

0.8

Power Dissipation

0.8

0.8

W

Power Dissipation

0.32

0.32

W

Maximum Junction-to-Ambient

156

156

_C/W

Operating Junction and Storage Temperature Range

–55 to 150

_C

Notes

a.

Pulse width limited by maximum junction temperature.

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.

Applications information may also be obtained via FaxBack, request document #70612.