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ND2012L Datasheet(PDF) 2 Page - TEMIC Semiconductors

Part # ND2012L
Description  N-Channel Depletion-Mode MOSFET Transistors
PDF  4 Pages
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Manufacturer  TEMIC [TEMIC Semiconductors]
Direct Link  http://www.temic.de
Logo TEMIC - TEMIC Semiconductors

ND2012L Datasheet(HTML) 2 Page - TEMIC Semiconductors

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ND2012L/2020L
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specificationsa
Limits
ND2012L
ND2020L
Parameter
Symbol
Test Conditions
Typb Min
Max
Min
Max
Unit
Static
Drain Source Breakdown Voltage
V(BR)DSV
VGS = –8 V, ID = 10 mA
220
200
Drain-Source Breakdown Voltage
V(BR)DSV
VGS = –5 V, ID = 10 mA
220
200
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 5 V, ID = 10 mA
–1.5
–4
–0.5
–2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"10
"10
nA
Gate-Body Leakage
IGSS
TJ = 125_C
"50
"50
nA
VDS = 160 V, VGS = –8 V
1
Drain Cutoff Current
ID(off)
TJ = 125_C
200
mA
Drain Cutoff Current
ID(off)
VDS = 160 V, VGS = –5 V
1
mA
TJ = 125_C
200
Drain-Saturation Currentc
IDSS
VDS = 10 V, VGS = 0 V
300
30
30
mA
VGS = 2 V, ID = 20 mA
7
W
Drain-Source On-Resistancec
rDS(on)
VGS = 0 V, ID = 20 mA
8
12
20
W
TJ = 125_C
12.6
30
50
Forward Transconductancec
gfs
VDS =75 V ID =20mA
55
mS
Common Source Output Conductancec
gos
VDS = 7.5 V, ID = 20 mA
75
mS
Dynamic
Input Capacitance
Ciss
35
100
100
Output Capacitance
Coss
VDS = 25 V, VGS = –5 V, f = 1 MHz
10
20
20
pF
Reverse Transfer Capacitance
Crss
2
5
5
Switchingd
Turn-On Time
td(on)
V
V R
1250 W
20
Turn-On Time
tr
VDD = 25 V, RL = 1250 W
ID ^ 20 mA, VGEN = -5 V
20
ns
Turn-Off Time
td(off)
ID ^ 20 mA, VGEN = -5 V
RG = 25 W
10
ns
Turn-Off Time
tf
10
Notes
a.
TA = 25_C unless otherwise noted.
VDDQ20
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Pulse test: PW
v300 ms duty cycle v2%.
d.
Switching time is essentially independent of operating temperature.



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