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LM9061 Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM9061 Datasheet(HTML) 6 Page - National Semiconductor (TI) |
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6 / 14 page ![]() Typical Electrical Characteristics (Continued) Timing Definitions TLH12317 – 07 Application Hints BASIC OPERATION The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to provide gate drive voltage to power MOSFET transistors Any size of N-channel power MOSFET including multiple parallel connected MOSFETs for very high current applications can be used to apply power to a ground referenced load circuit in what is referred to as ‘‘high side drive’’ applications Figure 1 shows the basic application of the LM9061 TLH12317 – 8 FIGURE 1 Basic Application Circuit When commanded ON by a logic ‘‘1’’ input to pin 7 the gate drive output pin 4 rises quickly to the VCC supply potential at pin 5 Once the gate voltage exceeds the gate-source threshold voltage of the MOSFET VGS(ON) (the source is connected to ground through the load) the MOSFET turns ON and connects the supply voltage to the load With the source at near the supply potential the charge pump contin- ues to provide a gate voltage greater than the supply to keep the MOSFET turned ON To protect the gate of the MOSFET the output voltage of the LM9061 is clamped to limit the maximum VGS to 15V It is important to remember that during the Turn-ON of the MOSFET the output current to the Gate is drawn from the VCC supply pin The VCC pin should be bypassed with a capacitor with a value of at least ten times the Gate capaci- tance and no less than 01 mF The output current into the Gate will typically be 30 mA with VCC at 14V and the Gate at 0V As the Gate voltage rises to VCC the output current will decrease When the Gate voltage reaches VCC the output current will typically be 1 mA with VCC at 14V A logic ‘‘0’’ on pin 7 turns the MOSFET OFF When com- manded OFF a 110 mA current sink is connected to the output pin This current discharges the gate capacitances of the MOSFET linearly When the gate voltage equals the source voltage (which is near the supply voltage) plus the VGS(ON) threshold of the MOSFET the source voltage starts following the gate voltage and ramps toward ground Eventually the source voltage equals 0V and the gate con- tinues to ramp to zero thus turning OFF the power device This gradual Turn-OFF characteristic instead of an abrupt removal of the gate drive can in some applications mini- mize the power dissipation in the MOSFET or reduce the duration of negative transients as is the case when driving inductive loads In the event of an overstress condition on the power device the turn OFF characteristic is even more gradual as the output sinking current is only 10 mA (see Protection Circuitry Section) 6 |
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