LM2326 datasheet(5/19 Pages) NSC

Part #	LM2326

Description	PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	NSC [National Semiconductor (TI)]

Direct Link	http://www.national.com

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5 / 19 page

Charge Pump Current Specification Definitions

I1 = CP sink current at V

CPo =Vp–∆V

I2 = CP sink current at V

CPo =Vp/2

I3 = CP sink current at V

CPo = ∆V

I4 = CP source current at V

CPo =Vp–∆V

I5 = CP source current at V

CPo =Vp/2

I6 = CP source current at V

CPo = ∆V

∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V

CC and ground. Typical values

are between 0.5V and 1.0V

ICP

o vs VCPo = Charge Pump Output Current magnitude variation vs Voltage =

[1⁄2 * { |I1| − |I3|}]/[1⁄2 * {|I1| + |I3|}] * 100% and [1⁄2 * {|I4| − |I6|}]/[1⁄2 * {|I4| + |I6|}] * 100%

ICP

o-sink vs ICPo–source = Charge Pump Output Current Sink vs Source Mismatch =

[|I2| − |I5|]/[1⁄2 * {|I2| + |I5|}] * 100%

ICP

o vs T = Charge Pump Output Current magnitude variation vs Temperature =

[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100% and [|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%

DS100127-3

LM2326 Datasheet(PDF) 5 Page - National Semiconductor (TI)