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STW40N90K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW40N90K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() November 2016 DocID028929 Rev 2 1/14 This is information on a product in full production. www.st.com STW40N90K5, STWA40N90K5 N- channel 900 V, 0.088 Ω typ., 40 A MDmesh™ K5 Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STW40N90K5 900 V 0.099 Ω 40 A STWA40N90K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packaging STW40N90K5 40N90K5 TO-247 Tube STWA40N90K5 TO-247 long leads |
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