STW40N90K5 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STW40N90K5, STWA40N90K5

4/14

DocID028929 Rev 2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

900

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 900 V

µA

VGS = 0 V, VDS = 900 V,

TC=125 °C(1)

µA

IGSS

Gate-body leakage current

VDS=0 V, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 20 A

0.088

0.099

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS=0 V, VDS =100 V, f=1 MHz

3263

Coss

Output capacitance

212

Crss

Reverse transfer

capacitance

1.3

Co(tr)(1)

Equivalent capacitance

time related

VGS = 0 V, VDS = 0 V to 720 V

429

Co(er)(2)

Equivalent capacitance

energy related

159

Intrinsic gate resistance

f = 1 MHz, ID=0 A

1.9

Total gate charge

VDD = 720 V, ID = 40 A

VGS =10 V

(see Figure 15: "Test circuit for

gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

37.5

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

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