STW40N90K5, STWA40N90K5

Electrical characteristics

DocID028929 Rev 2

5/14

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

(see Figure 14: "Test circuit for

resistive load switching times")

-

30.4

-

ns

Rise time

-

15.5

-

ns

Turn-off-delay time

-

84.5

-

ns

Fall time

-

13.4

-

ns

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Source-drain current

-

40

A

Source-drain current

(pulsed)

-

160

A

Forward on voltage

-

1.5

V

Reverse recovery

time

(see Figure 17: "Unclamped

inductive load test circuit")

-

693

ns

Reverse recovery

charge

-

22

µC

Reverse recovery

current

-

63

A

Reverse recovery

time

(see Figure 17: "Unclamped

inductive load test circuit")

-

884

ns

Reverse recovery

charge

-

29

µC

Reverse recovery

current

-

65.5

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.