STW40N90K5 datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STW40N90K5

Description	N-channel 900 V, 0.088 Ω typ., 40 A MDmesh™ K5 Power MOSFETs in TO-247 and TO-247 long leads packages

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 14 page

STW40N90K5, STWA40N90K5

Electrical ratings

DocID028929 Rev 2

3/14

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

±30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

ID(1)

Drain current (pulsed)

160

PTOT

Total dissipation at TC = 25 °C

446

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

V/ns

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 40 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS., VDD=450 V

(3)VDS ≤ 720 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.28

°C/W

Rthj-amb

Thermal resistance junction-amb

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

13.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID= IAR, VDD= 50 V)

750

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