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SD56120C Datasheet(PDF) 1 Page - STMicroelectronics |
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SD56120C Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() September 2009 Doc ID 15742 Rev 3 1/15 15 SD56120C RF power transistor, the LdmoST family Features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. Figure 1. Pin connections M246 Epoxy sealed 1-2 Drain 4-5 Gate 3 Source 12 4 5 Table 1. Device summary Order code Package Branding SD56120C M246 SD56120 www.st.com |
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