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STP6N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP6N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 26 page ![]() This is information on a product in full production. March 2015 DocID024661 Rev 3 1/26 STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages Datasheet - production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220 1 2 3 TAB D2PAK 1 3 DPAK 1 2 3 I2PAK TAB TAB 1 3 TAB D(2, TAB) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STB6N80K5 800 V 1.6 Ω 4.5 A 85 W STD6N80K5 STI6N80K5 STP6N80K5 Table 1. Device summary Order code Marking Package Packaging STB6N80K5 6N80K5 D2PAK Tape and reel STD6N80K5 DPAK STI6N80K5 I2PAK Tube STP6N80K5 TO-220 www.st.com |
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