STP6N80K5 datasheet(4/26 Pages) STMICROELECTRONICS

4 / 26 page

Electrical characteristics

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5

4/26

DocID024661 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

800

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

VDS = 800 V, Tj = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2 A

1.3

1.6

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

270

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-0.7

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

VGS = 0,

VDS = from 0 to 640 V

-38

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-16

Intrinsic gate resistance

f = 1MHz, ID = 0

7.5

Total gate charge

VDD = 640 V, ID = 4.5 A

VGS = 10 V

-13

Qgs

Gate-source charge

2.1

Qgd

Gate-drain charge

9.6

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