STP6N80K5 datasheet(3/26 Pages) STMICROELECTRONICS

3 / 26 page

DocID024661 Rev 3

3/26

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

Drain current (continuous) at TC = 25 °C

4.5

Drain current (continuous) at TC = 100 °C

2.8

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax )

1.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

dv/dt (2)

ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

DPAK

I2PAK

TO-220

Rthj-case

Thermal resistance junction-case

1.47

°C/W

Rthj-amb

Thermal resistance junction-amb

62.50

Rthj-pcb

(1)

When mounted on FR-4 board of 1 inch², 2 oz Cu

Thermal resistance junction-pcb

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