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STF11N65K3 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STF11N65K3
Description  Gate charge minimized
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF11N65K3 Datasheet(HTML) 1 Page - STMicroelectronics

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October 2011
Doc ID 17931 Rev 2
1/13
13
STF11N65K3
N-channel 650 V, 0.765
Ω, 11 A, TO-220FP
SuperMESH3™ Power MOSFET
Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
This device is an N-channel Zener-protected
SuperMESH3™ Power MOSFET developed
using STMicroelectronics' SuperMESH™
technology, achieved through optimization of ST's
well established strip-based PowerMESH™
layout. In addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1.
Internal schematic diagram
Type
VDSS
RDS(on)
max
ID
Ptot
STF11N65K3
650 V
< 0.85
Ω 11 A 35 W
TO-220FP
1
2
3
D(2)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF11N65K3
11N65K3
TO-220FP
Tube
www.st.com
Obsolete
Product(s)
- Obsolete
Product(s)


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