STF11N65K3 datasheet(3/13 Pages) STMICROELECTRONICS

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STF11N65K3

Electrical ratings

Doc ID 17931 Rev 2

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain source voltage (VGS=0)

650

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

7.2

EAS

Single pulse avalanche energy (2)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V

212

Derating factor

0.28

W/°C

dv/dt (3)

ISD ≤11 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS, VDS peak < V(BR)DSS

Peak diode recovery voltage slope

V/ns

VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)

2500

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

3.57

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

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