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STL7N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL7N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() January 2015 DocID027417 Rev 1 1/13 This is information on a product in full production. www.st.com STL7N60M2 N- channel 600 V, 0.92 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x5 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ Tjmax RDS(on) max ID STL7N60M2 650 V 1.05 Ω 5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STL7N60M2 7N60M2 PowerFLAT 5x5 Tape and reel 1 4 12 7 6 5 11 10 PowerFLAT™ 5x5 Top View D(5, 6, 11, 12) G(10) S(2, 3, 4, 7, 8, 9) G 10 S 9 S 8 S 7 1 NC 2 S 3 S 4 S 6 D 5 D D 11 D 12 Pin 1 identification GIPG260120150916ALS |
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