STL7N60M2 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STL7N60M2

4/13

DocID027417 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 2 A

0.92

1.05

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

271

Coss

Output capacitance

15.7

Crss

Reverse transfer

capacitance

0.68

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

75.5

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

7.2

Total gate charge

VDD = 480 V, ID = 5 A, VGS = 10 V

(see Figure 15: "Gate charge

test circuit")

8.8

Qgs

Gate-source charge

1.8

Qgd

Gate-drain charge

4.3

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 2.5 A

RG = 4.7

Ω, VGS = 10 V

(see Figure 14: "Switching times

test circuit for resistive load" and

Figure 19: "Switching time

waveform")

7.6

Rise time

7.2

td(off)

Turn-off-delay time

19.3

Fall time

15.9

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