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STL60N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL60N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() This is information on a product in full production. October 2013 DocID024453 Rev 3 1/16 16 STL60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1. Internal schematic diagram Features • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. PowerFLAT™ 5x6 1 2 3 4 Order code VDS RDS(on) max ID PTOT STL60N10F7 100 V 0.018 Ω 12 A 5 W Table 1. Device summary Order code Marking Package Packaging STL60N10F7 60N10F7 PowerFLAT™ 5x6 Tape and reel www.st.com |
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