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STL60N10F7 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL60N10F7
Description  N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL60N10F7 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024453 Rev 3
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STL60N10F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
20
V
ID
(1)
1.
This value is rated according to Rthj-c.
Drain current (continuous) at TC = 25 °C
46
A
ID
(1)
Drain current (continuous) at TC = 100 °C
33
A
ID
(2)
2.
This value is rated according to Rthj-pcb.
Drain current (continuous) at Tpcb = 25 °C
12
A
ID
(2)
Drain current (continuous) at Tpcb =100 °C
9
A
IDM
(2)(3)
3.
Pulse width limited by safe operating area.
Drain current (pulsed)
48
A
PTOT
(1)
Total dissipation at Tc = 25 °C
72
W
PTOT
(2)
Total dissipation at Tpcb = 25 °C
5
W
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
31
°C/W
Rthj-c
Thermal resistance junction-case
2.08
°C/W



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