STL60N10F7 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL60N10F7

Description	N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STL60N10F7

4/16

DocID024453 Rev 3

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 100 V

VDS = 100 V; TC=125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 6 A

0.0145

0.018

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =50 V, f=1 MHz,

VGS=0

-1640

Coss

Output capacitance

360

Crss

Reverse transfer

capacitance

-25

Total gate charge

VDD=50 V, ID = 12 A

VGS =10 V

Figure 14

-25

Qgs

Gate-source charge

Qgd

Gate-drain charge

Qoss

Output charge

VDD=40 V, VGS=0V

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=50 V, ID= 6 A,

RG=4.7 Ω, VGS= 10 V

Figure 13

-15

Rise time

td(off)

Turn-off delay time

Fall time

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