ESDA18-1F4 datasheet(3/8 Pages) STMICROELECTRONICS

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ESDA18-1F4

Characteristics

Doc ID 023828 Rev 1

3/8

Figure 4.

ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 5.

ESD response to IEC 61000-4-2

(-8 kV contact discharge)

5V/div

eak

CL: P

clamping voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

34.2 V

21.8 V

20.5 V

17.5 V

20 ns/div

5 V/div

V : Peak clamping voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

-17.6 V

-3.2 V

-4.9 V

-1.5 V

20 ns/div

Figure 6.

Junction capacitance versus

reverse applied voltage (typical

values)

Figure 7.

Insertion losses versus frequency

(typical values)

Figure 8.

Peak pulse power versus

exponential pulse duration

(maximum values)

Figure 9.

Variation of peak pulse power

versus initial junction temperature

(maximum values)

100

110

120

130

140

150

0123456789

F = 1 MHz

Vosc = 30 mV

VR(V)

Tj = 25 °C

C(pF)

100k

10M

100M

-50

-40

-30

-20

-10

S21

S21 (dB)

F/Hz

100

1000

10000

100

1000

= 25

initial

°C

t p (µs)

(W)

100

150

200

250

300

350

400

450

500

100

125

150

8/20µs

Tj(°C)

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