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PACDN009 Datasheet(PDF) 5 Page - ON Semiconductor

Part # PACDN009
Description  5-Channel ESD Protection Array
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

PACDN009 Datasheet(HTML) 5 Page - ON Semiconductor

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PACDN009
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5
the effects of the parasitic series inductance inherent in the capacitor. The breakdown voltage of the zener diode should be
slightly higher than the maximum supply voltage.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also ON Semiconductor Application Notes AP209, “Design Considerations for ESD Protection” and AP219, “ESD
Protection for USB 2.0 Systems”.
POSITIVE SUPPLY RAIL
CHANNEL
INPUT
GROUND RAIL
CHASSIS GROUND
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
LINE BEING
PROTECTED
ONE
CHANNEL
OF
PACDN009
D2
D1
L1
L2
VCL
VN
VP
PATH OF ESD CURRENT PULSE IESD
0 A
20 A
Figure 2. Application of Positive ESD Pulse between Input Channel and Ground



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