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PACDN009 Datasheet(PDF) 3 Page - ON Semiconductor |
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PACDN009 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() PACDN009 http://onsemi.com 3 SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Supply Voltage (VP − VN) 6.0 V Diode Forward DC Current (Note 1) 20 mA Operating Temperature Range −40 to +85 C Storage Temperature Range −65 to +150 C DC Voltage at any Channel Input (VN − 0.5) to (VP + 0.5) V Package Power Rating 200 mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Only one diode conducting at a time. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range −40 to +85 C Operating Supply Voltage (VP − VN) 0 to 5.5 V Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units IP Supply Current (VP − VN) = 5.5 V 10 mA VF Diode Forward Voltage IF = 20 mA 0.65 0.95 V ILEAK Channel Leakage Current 0.1 1.0 mA CIN Channel Input Capacitance @ 1 MHz, VP = 5 V, VN = 0 V, VIN = 2.5 V (Note 2) 3 5 pF VESD ESD Protection Peak Discharge Voltage at any Channel Input, in System a) Human Body Model, MIL−STD−883, Method 3015 b) Contact Discharge per IEC 61000−4−2 c) Air Discharge per IEC 61000−4−2 (Note 2) (Note 3) (Note 4) (Note 4) 15 8 15 kV VCL Channel Clamp Voltage Positive Transients Negative Transients @ 15 kV ESD HBM VP + 13.0 VN − 13.0 V 1. All parameters specified at TA = 25C unless otherwise noted. VP = 5 V, VN = 0 V unless noted. 2. From I/O pins to VP or VN only. VP bypassed to VN with a 0.22 mF ceramic capacitor (see Application Information for more details). 3. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 kWVP = 5.0 V, VN grounded. 4. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 5.0 V, VN grounded. |
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