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RT8494GS Datasheet(PDF) 14 Page - Richtek Technology Corporation

Part # RT8494GS
Description  High Voltage High Current LED Driver Controller
PDF  17 Pages
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8494GS Datasheet(HTML) 14 Page - Richtek Technology Corporation

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RT8494
14
DS8494-01 November 2015
www.richtek.com
©
Copyright 2015 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
For LED applications, the equivalent resistance of the LED
is typically low and the output filter capacitor should be
sized to attenuate the current ripple. Use of X7R type
ceramic capacitors is recommended. Lower operating
frequencies will require proportionately higher capacitor
values.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX)
− TA) / θJA
where TJ(MAX) is the maximum junction temperature, TAis
the ambient temperature, and
θJAis the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125
°C. The junction to
ambient thermal resistance,
θJA, is layout dependent. For
SOP-14 packages, the thermal resistance,
θJA, is
113.9
°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25
°C
can be calculated by the following formula :
PD(MAX) = (125
°C − 25°C) / (113.9°C/W) = 0.87W for
SOP-14 package
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal
resistance,
θJA. The derating curves in Figure 6 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.

OUT
OUT
OUT
IN
RIPPLE
SW
IV
C
VV
f
Schottky Diode Selection
The Schottky diode, with their low forward voltage drop
and fast switching speed, is necessary for the RT8494
applications. In addition, power dissipation, reverse voltage
rating and pulsating peak current are the important
parameters for the Schottky diode selection. Choose a
suitable Schottky diode whose reverse voltage rating is
greater than maximum output voltage. The diode’s
average current rating must exceed the average output
current. The diode conducts current only when the power
switch is turned off (typically less than 50% duty cycle).
If using the PWM feature for dimming, it is important to
consider diode leakage, which increases with the
temperature, from the output during the PWM low interval.
Therefore, choose the Schottky diode with sufficiently low
leakage current.
Capacitor Selection
The input capacitor reduces current spikes from the input
supply and minimizes noise injection to the converter. For
most the RT8494 applications, a 10
μF ceramic capacitor
is sufficient. A value higher or lower may be used
depending on the noise level from the input supply and
the input current to the converter.
In Boost application, the output capacitor is typically a
ceramic capacitor and is selected based on the output
voltage ripple requirements. The minimum value of the
output capacitor COUT is approximately given by the
following equation :
SW
OCP
Current Limlit Threshold Minimum Value
R
I
where IOCP is about 1.33 to 1.5 times of inductor peak
current IPEAK.
The placement of RSW should be close to the source of
the N-MOSFET and the IC GND of the RT8494. The ISW
pin input to RT8494 should be a Kelvin sense connection
to the positive terminal of RSW.
switch current to drive the application without exceeding
the current limit threshold set by the ISW pin sense
threshold of RT8494. The ISW sense resistor value can
be calculated according to the formula below :



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