S8550 datasheet(17/31 Pages) SII

17 / 31 page

STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS

Rev.5.0_01

S-8550 Series

1. 9 FB voltage (VFB) vs. Input voltage (VIN)

2.0

4.0

5.0

5.5

612

600

588

VIN [V]

2.5

3.0

3.5

4.5

604

608

596

592

2. Example of Major Temperature Characteristics (Ta

= −40 to +85°C)

2. 1 Current consumption 1 (ISS1) vs. Temperature (Ta)

2. 2 Current consumption during shutdown (ISSS) vs. Temperature (Ta)

−40

75 85

500

−25

300

400

200

100

Ta [

C]

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

−40

75 85

1.0

−25

0.6

0.8

0.4

0.2

Ta [

C]

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

2. 3 Oscillation frequency (fosc) vs. Temperature (Ta)

2. 4 Soft-start time (tSS) vs. Temperature (Ta)

−40

75 85

1.32

1.08

−25

1.28

1.20

1.16

Ta [

C]

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

1.12

1.24

−40

75 85

1.3

0.7

−25

1.1

1.0

0.9

Ta [

C]

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

0.8

1.2

2. 5 Power MOS FET on-resistance (RFET) vs. Temperature (Ta)

2. 6 Power MOS FET leakage current (ILSW) vs. Temperature (Ta)

−40

75 85

0.8

0.2

−25

Ta [

C]

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

VIN = 5.5 V

VIN = 3.6 V

VIN = 2.0 V

Pch

Nch

0.6

0.5

0.4

0.3

0.7

−40

75 85

0.5

−0.5

−25

Ta [

C]

VIN = 5.5 V

Pch

Nch

0.1

−0.1

−0.4

0.4

0.2

0.3

−0.2

−0.3

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